BCP55E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA, 2V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

2 W

Product Status :

Active

Supplier Device Package :

PG-SOT223-4-21

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

60 V