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- Transistors - Bipolar (BJT) - Arrays
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Supplier Device Package : US6
- Frequency - Transition : 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
- Power - Max : 200mW, 210mW
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN/PNP 50V ... |
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2,982
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