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- Transistors - Bipolar (BJT) - Arrays
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Power - Max : 200mW
- Voltage - Collector Emitter Breakdown (Max) : 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
- Transistor Type : 2 NPN (Dual) Matched Pair, Common Emitter
1 Records
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Toshiba Electronic Devices and Storage Corporation | TRANS 2NPN 50V 0.15A... |
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