- Frequency - Transition:
-
- Operating Temperature:
-
- Package / Case:
-
- Transistor Type:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Arrays
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Power - Max : 200mW
- Voltage - Collector Emitter Breakdown (Max) : 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
6 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | NPN + NPN IND. TRA... |
|
35,500
In-stock
|
Buy Now Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS 2NPN 50V 0.15A... |
|
2,820
In-stock
|
Buy Now Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS 2NPN 50V 0.15A... |
|
607
In-stock
|
Buy Now Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q NPN + N... |
|
35,000
In-stock
|
Buy Now Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS 2NPN 50V 0.15A... |
-
|
35,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS NPN/PNP 50V ... |
-
|
35,000
In-stock
|
Get Quote |