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- Transistors - Bipolar (BJT) - Arrays
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
- Package / Case : 6-TSSOP, SC-88, SOT-363
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
- Operating Temperature : 125°C (TJ)
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Toshiba Electronic Devices and Storage Corporation | X34 PB-F US6 PLN (LF... |
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