- Frequency - Transition:
-
- Vce Saturation (Max) @ Ib, Ic:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Arrays
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Supplier Device Package : US6
- Operating Temperature : 125°C (TJ)
- Power - Max : 200mW
- Transistor Type : NPN, PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | X34 PB-F US6 PLN (LF... |
|
15,952
In-stock
|
Buy Now Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS NPN/PNP 50V ... |
-
|
35,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS NPN/PNP 50V ... |
-
|
35,000
In-stock
|
Get Quote |