- DC Current Gain (hFE) (Min) @ Ic, Vce:
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- Filter:
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- Transistors - Bipolar (BJT) - Arrays
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Supplier Device Package : US6
- Operating Temperature : 125°C (TJ)
- Power - Max : 200mW
- Transistor Type : NPN, PNP
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | TRANS NPN/PNP 50V ... |
|
35,000
In-stock
|
Buy Now Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS NPN/PNP 50V ... |
-
|
35,000
In-stock
|
Get Quote |