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- Transistors - Bipolar (BJT) - Arrays
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Mounting Type : Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
- Frequency - Transition : 80MHz
- Package / Case : SOT-563, SOT-666
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q PNP + N... |
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7,430
In-stock
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