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- Transistors - Bipolar (BJT) - Arrays
- Toshiba Electronic Devices and Storage Corporation
- Product Status : Active
- Power - Max : 200mW
- Supplier Device Package : US6
- Operating Temperature : -
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q PNP + N... |
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35,000
In-stock
|
Buy Now Get Quote |