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- Transistors - Bipolar (BJT) - Arrays
- Toshiba Electronic Devices and Storage Corporation
- Operating Temperature : 150°C (TJ)
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Current - Collector (Ic) (Max) : 150mA
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10MA, 100MA
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN/PNP 50V ... |
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